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SERIES
FEATURE
Built-in bias resistor(R1=2.2k) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)@IC=10mA/IB=0.5mA Low on Resistance Ron=0.70(TYP.)@VI=5V
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
RTAN230T2 (PRELIMINARY) RTAN230M
2.1 0.2 0.8 0.2 0.425 1.25
Unitmm
0.425
0.25
0.4
APPLICATION
muting circuit , switching circuit
1.2 0.8
0.65

2.0 1.3
0.4
0.9
0.65
EQUIVALENT CIRCUIT
C (OUT)
0.7
R1 B (IN)
JEITA, JEDEC ISAHAYAT-USM TERMINAL CONNECTOR BASE EMITTER COLLECTOR RTAN230U
1.6 0.4 0.8 0.4
JEITASC-70 JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR RTAN230C
2.5 0.5 1.5 0.5
E
(GND)
0.3
00.1
0.15 00.1 0.16 0.4
0.5

2.9 1.90
1.6 1.0
0.7
0.55
0.15
1.1
JEITASC-75A JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
00.1
JEITASC-59 JEDECSimilar to TO-236 TERMINAL CONNECTOR BASE EMITTER COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
0.5
0.95
0.5
0.3
SERIES
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RTAN230T2 RATING RTAN230U RTAN230M 40 40 20 400 150 +150 -55+150 LIMIT TYP 200 RTAN230C UNIT V V V mA mW
125 +125 -55+125
ELECTRICAL CHARACTERISTICS
SYMBOL B EB CE E RON PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product Output "ON" resistance
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
TEST CONDITION I C=50AIE=0mA I E=50AIC=0mA I C=1mARBE= VCB=40VI E =0mA VEB=40VI C =0mA VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=10VI E =-10mAf=100MHz VI=5VRL=1k
MIN 40 40 20
MAX
UNIT V V V A A mV k MHz
820 1.54 10 2.2 40 0.70
0.5 0.5 2500 2.86
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE VS. COLLECTOR CURRENT 100 Ta=25 VCE=0.2V INPUT ON VOLTAGE VI(ON) (V)
COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 Ta=25 VCE=5V
10
COLLECTOR CURRENT IC (A)
100
1
10
0.1 0.1 1 10 COLLECTOR CURRENT IC (mA) 100 1000
0
0.2
0.4
0.6
0.8
1
INPUT OFF VOLTAGE VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 10000
DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT
DC FORWARD CURRENT GAIN hFE
1000
DC REVERSE CURRENT GAIN hFER
1000
100 Ta=25 VCE=5V 10
100 Ta=25 VEC=5V 10
1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 100 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) Ta=25 IC/IB=20 ON RESISTANCE Ron () 100
ON RESISTANCE VS. INPUT VOLTAGE
10
10
1 Ta=25
1
0.1 0.1 1 10 collector current IC (mA) 100 1000
0.1 0.1 1 10 100 INPUT VOLTAGE VI (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Nov.2006

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